Proposal of an AlAs-oxide current confinement structure for GaInAs/AlGaInAs long wavelength surface emitting lasers

In this paper, we propose a novel long-wavelength VCSEL with an oxidized AlAs confinement structure which is grown on an InP substrate. We expect the proposed structure will provide a threshold reduction and a high temperature operation of long wavelength VCSELs. We present some characteristics of AlAs oxidation on InP substrates and demonstrate GaInAs-AlGaInAs edge emitting lasers (/spl Lambda/=1.65 /spl mu/m) with the AlAs-oxide current confinement for the first time.