Ti/sub 2/N barrier layers for multi-layer interconnection

An adhesion strength of 4.4/spl times/10/sup 7/ Pa is attained in Ti/sub 2/N/TiAl/sub 3/ inter-layer formed by reaction at the Ti/AlN for AlN substrate. This strength is much greater than of 2.6/spl times/10/sup 7/ Pa in Ti adhesion layer conventionally used. Therefore, this layer can be used instead of Ti adhesion layer. Since this layer also showed excellent barrier performance for Au, Ni and Al conductive layers, the Ti/sub 2/N layer can also be used in place of Pt barrier layer in multi-layer interconnection. These results suggests that triple layer interconnection, such as Au/Pt/Ti/AlN and Ni/Pt/Ti/AlN, can be replaced by a double layer interconnection of Au/Ti/sub 2/N/AlN employing Ti/sub 2/N as adhesion and barrier layers. This double layer interconnection is useful for the manufacture of ceramic package and circuit boards.