A C-V examination of the electrically reversible depassivation/passivation mechanism in polycrystalline silicon

Recently, we reported the first observations of an electrically reversible depassivation/passivation phenomenon in hydrogen passivated polycrystalline silicon and presented a model for it based on hydrogen release and drift. Here we show our latest finding obtained in studying the depassivation/passivation phenomenon for an RF-hydrogenated polycrystalline silicon n-channel TFT using high frequency capacitance-voltage characterization.