Ferroelectric field effect studies of PZT ceramics

The ferroelectric field effect was observed in a semiconductor film of amorphous silicon deposited on a ferroelectric lead zirconate-titanate (PZT) substrate. The phenomena of source-drain current of the semiconductor film controlled by the polarization state of the PZT substrate were studied. The source-drain current exhibited hysteretic behavior because of the hysteretic characteristics of ferroelectrics.<
>