Super low-noise self-aligned gate GaAs MESFET with noise figure of 0.87 dB at 12 GHz

An advanced self-aligned multilayer gate FET (SAMFET) has been developed for super-low-noise monolithic microwave integrated circuit (MMIC) amplifiers. Reduction of gate resistance by adopting a novel T-shaped multilayer gate results in a 0.2-dB improvement of the minimum noise figure compared with conventional SAMFETs. At 12-GHz, the advanced SAMFET gives a minimum noise figure of 0.87 dB with associated gain of 10.62 dB. Excellent uniformity of performance and high reliability are confirmed. They are attributed to a complete planar structure and refractory WSi gate contact. This technology is considered promising for high-performance, low-cost MMICs.<
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