Simulation Comparison of Capacitance Voltage Characteristics in Nickel Oxide and Silicon dioxide-based MOS Capacitor

Aim: This research compares the capacitance-voltage characteristics of novel Nickel oxide (NiO) based MOS (Metal-Oxide-Semiconductor) capacitors with Silicon dioxide (SiO2) based MOS capacitors at temperatures ranging from 100 K to 560 K. Materials and Methods: The research study is divided into two groups. There are 24 samples in each of the two groups (NiO and SiO2). Band energy diagram tool to obtain the capacitance-voltage characteristics. To calculate the sample size, G power analysis is utilized. The pretest power for this study has been kept at 80%. Results: According to the analysis, the stack capacitance of nickel oxide (NiO) is 1.544E-7 F/cm2 and the stack capacitance of silicon dioxide (SiO2) is 6.794E-8 F/cm2 at 100K. The data were obtained using the SPSS tool at a 0.001 (p 0.05) level of significance. Conclusion: From the analysis, the capacitance of Nickel oxide (NiO) is significantly higher than silicon dioxide (SiO2). For both NiO and SiO2, the optimal temperature for maximum stack capacitance was 100K.