Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells

We report on the growth, fabrication, and characterization of deep ultraviolet (UV) light-emitting diodes (LEDs) with quaternary AlInGaN-AlInGaN multiple quantum wells (MQWs) in the active region. These high quality quaternary MQWs were deposited over sapphire and n-SiC substrates using a novel pulsed atomic layer epitaxy (PALE) technique. LEDs with peak emission wavelengths from 305-340 nm were fabricated and characterized. Using square geometry devices over sapphire and n-SiC substrates we studied the role of current crowding. Numerical simulation results are also provided to explain the observed current-voltage and light-emission characteristics.