A Scalable Power Splitter using High Sheet Polysilicon Resistor Suitable for RFIC Application

Integrated circuits employing CMOS RF technology are increasingly common and widely deployed. There are currently a wide range of materials available for use in the process that are optimised for RF noise, matching characteristics, and improved resistivity. In this paper, the highly resistive passive resistor component is used in the power splitter circuits, where a high sheet polysilicon resistor is the best choice. The high sheet polysilicon resistor and its extracted parasitic capacitance are shown to be the best match among the various resistors mentioned in the literature. Power splitter circuits use these resistor characteristics to get the best possible results, such as low return and insertion losses and good isolation. In order to get the desired resistor values for the power splitter’s individual components, twelve parallel high sheet poly resistors are employed. A total of six electronic componentsâtwo metal finger capacitors and four lumped element spiral inductorsâare employed. Power splitter and probe pad components from the layout are on display. The correctness of the layout is confirmed by simulations run before to and after layout. The design schematic, pre-layout and post layout simulation results confirms that high sheet polysilicon resistors are the best selected potential candidate for RFIC application.