Simulation and Comparison of Current-Voltage Characteristics in Double Gate Nanowire FET using ZrTiO4 and SiO2 as Gate Oxide Materials

The aim of the work is to simulate and compare current-voltage characteristics in double gate nanowire field effect transistors (NWFET) made of zirconium titanate (ZrTiO
4
) and silicon dioxide (SiO
2
) as gate oxides with thicknesses ranging from 1 nm to 30 nm. Materials and methods: Group 1 and group 2 are ZrTiO
4
and SiO
2
based double gate NWFET. A total of 294 samples of drain current required for sample size analysis with a pretest power of 80 % and a type I error rate of 0.05. Results: The two groups are analysed using independent sample t tests providing a significance value of 0.0001 (p < 0.05). The drain current of ZrTiO
4
based NWFET has a mean of 4.85E-4 A, standard deviation of 7.188E-4 and standard error mean of S.93E-5 whereas the drain current of SiO
2
based NWFET has a mean of 1.15E-4 A, standard deviation of 8.014E-4 and standard error mean of 6.61E-6. Conclusion: ZrTiO
4
(mean = 0.485) nanowire has a higher mean drain current than SiO
2
(mean = 0.115). The drain current is altered by varying the oxide thickness of the material. The drain current of ZrTiO
4
is significantly better than SiO
2
.