Low Thermal Budget Reconfigurable Fully Depleted Silicon on Insulator Field-Effect-Transistors With Embedded Boolean Logic

We report the low thermal budget reconfigurable fully depleted silicon on insulator (FDSOI) field-effect-transistors, focusing on the management of the fabrication thermal budget, toward three-dimensional integration and the further improvement of the circuit functionality. This is realized using atomic layer deposition tool-enabled O2/NH3 plasma surface passivation technology and long duration thermal procedure. Moreover, such front-gated FDSOI reconfigurable field effect transistors (RFETs) gain the embedded Boolean logic of “AND” and “NOR” in N and P-type modes, respectively. This strategy has the potential to be a key enabler for functional improvement in the nanoscale hyper-scaling era.