Fabrication and Electrical Properties of Novel ZnTiO3/Si Capacitors with Various Zn(NO3)2 Concentrations

LPD method has many advantages such as low-temperature deposition, large deposition area, good film uniformity, and good step coverage. Therefore, we choose the LPD method to deposit zinc titanate (ZnTiO
3
) thin films, using hexafluorotitanium ammonia ((NH
4
)
2
TiF
6
) powder and zinc nitrate (Zn(NO
3
)
2
•6H
2
O) powder to synthesize zinc titanate film. By changing the molar concentration of zinc nitrate and post-deposition annealing, we obtain the best thin film data. When zinc nitrate was 1.3 M molar volume concentration and annealed for one hour using nitrogen as the post-deposition annealing gas, measured electrical properties including oxide capacitance (C
ox
), leakage current Density, k value, equivalent oxide thickness (EOT) effective oxide charge density (Q
EFF
) and interface state density (D
it
) are 50.1 pF, 1.94 × 10
^-5
A/cm
²
at +5 V, 16.95, 48.8 nm, 1.76 × 10
¹¹
cm
^-2
, and 6.2 × 10
¹¹
cm
^-2
eV
^-1
, respectively. The data reveal that the zinc titanate (ZnTiO
3
) film is successfully deposited on Si and has good electrical properties.