Substrate temperature effect of CdTe films grown by PLD on photovoltaic properties of CdS/CdTe solar cells

CdS films were grown on SnO2:F substrates by Chemical Bath Deposition at 90°C, thiourea was employed as Sulphur source at two concentrations; 0.1 M and 0.075 M. The structural, optical and electrical properties of the CdS thin films were analyzed as a function of thiourea concentration. The CdS sample at 0.1 M of thiourea had greater mobility values which was the main difference between both thiourea Consequently, CdTe films were grown on the SnO
2
by Pulsed:F/CdS substrates Laser Deposition (PLD) at different substrate temperatures 25°C, 100°C, 200°C, 300°C and 400°C to evaluate the influence of the temperature on the structural and optical properties. It was observed that at a substrate temperature of 300°C the CdTe vibrational mode predominated, and the grain size was greater which is related to the photovoltaic properties of the cell. The best J-V measurement achieved was the heterostructure with CdS-0.1 M of thiourea and CdTe deposited at 300°, which has an efficiency of 2.38%.