High-Speed Avalanche Photodiodes with Composite Charge Layer and Flip-Chip Bonding Package for 106 Gbit/sec Transmission

A Novel In
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A1
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As based APD with composite charge layer is demonstrated for 106 Gbit/s PAM-4 application. With a 14$\mu{\mathrm {m}}$ diameter, we can achieve high bandwidth (27GHz), high-responsivity (3.1A/W) with low dark current (200nA) and high GBP as 285 GHz under 0.9 $\mathrm{V}_{\mathrm{b}\mathrm{r}}$ operation.