InGaN/GaN Short-Period Superlattices in Nanowires for Developing Efficient Red Submicron LEDs

Red emission is achieved from nanowires grown with an InGaN/GaN short-period superlattice. Submicron scale LEDs, with area 0.75 μm × 0.75 μm fabricated on them exhibit peak external quantum efficiency of 2.2%, the highest value ever reported for a submicron red LED.