Frequency and Temperature-Based Noise Figure Modeling for GaAs HEMTs

The noise figure modeling in a high-frequency range for two GaAs-based HEMTs with different gate widths of
$\mathbf{200}\ \boldsymbol{\mu} \mathbf{m}$
and
$\mathbf{150}\ \boldsymbol{\mu} \mathbf{m}$
is shown in this work throughout a broad temperature range, e.g., −40 to 150°C. The typical noise characteristics have been modeled for the minimal noise figure (NFmin), association gain (Ga), and equivalent noise resistance (RN) at various frequencies and temperatures. Additionally, the noise-oriented parameters' temperature dependence was assessed. GaN HEMTs on various substrates and InP-and GaAs pHEMTs have noise-oriented features equivalent to the two GaAs FETs. The findings indicate that GaAs HEMTs have plenty of implications in operating LNAs at high temperatures.