AlN Passivation Technique for Ultra-Thin Barrier GaN Power Devices Demonstrating High Output Current and Low Current Degradation

For the first time, we introduce an effective passivation technique for ultra-thin AlGaN barrier metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs). Three different ultra-thin barrier structures were carried out to be compared for the device characteristics. The MOCVD-ALN passivated device demonstrated a high maximum drain current of 1002 mA/mm, low on-state resistance of 7.2 Ω.mm, and low current degradation, showing great potential for future power device applications.