On the Fitting and Improvement of RRAM Stanford-Based Model Parameters Using TiN/Ti/HfO2/W Experimental Data

The use of Resistive Random Access Memory (RRAM) devices is becoming pervasive in many applications. In particular, security based primitives can exploit their variability and non-volatility for generating cells for Non-Volatile Secure Memory (NVSM) and Physically Unclonable Function (PUF). Stanford-PKU Resistive Random Access Memory (RRAM) model is a successful model that has been used for simulating different types of RRAM-based systems. However, some circuit-related problems appear when more than one device are coupled together. In this paper, a parameter fitting is performed for a real TiN/Ti/HfO
2
/W RRAMs and the statistical characteristics of the variability in the experimental data are analyzed and included in order to obtain a more reliable model for simulations.