Study of the defect distribution in power SiC-MOSFET before and after applied electrical stress

This paper introduces the results of the Deep Level Transient Fourier Spectroscopy (DLTFS) study of the defects distribution in power double-trench SiC MOSFETs before and after the applied defined electrical stress. Electrical stress significantly changes the distribution of electrically active defects in temperature ranges from 400 to 500 K. The presence of RD
1/2
, boron impurities, carbon interstitial, Z
1
/Z
2
defect, B and D centre was confirmed. After electrical stress, the most significant defect in the investigated samples was a double defect RD
1/2.