Electrical properties of Pt/TiO2/Pt and Pt/TiO2/TiN structures grown by atomic layer deposition using TTIP and water

Atomic layer deposition (ALD) growth of TiO2 thin films using TTIP and water is discussed in respect to deposition temperature and resulting crystallinity. Metal-insulator-metal devices with anatase- TiO2 ALD thin film dielectrics on TiN or Pt are investigated for their robustness against oxidative and non-oxidative thermal treatments, towards their use as oxide Schottky diodes or memristor selectors.