Charge trapping induced DRAM data retention time degradation under wafer-level burn-in stress

This paper investigates the effects of wafer burn-in on the degradation of DRAM data retention time characteristics. The problem was characterized using a substrate electron injection method described in this paper. As a result, it could be experimentally demonstrated that the data retention time degradation was attributed to the enhanced GIDL (gate induced drain leakage) due to the increased electric field caused by electron trapping in the gate oxide during wafer burn-in stress.