Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N/sub 2/O-grown oxides and NO RTA treatment

Ultra-thin gate dielectrics processed by remote plasma nitridation (RPN) of N/sub 2/O-grown oxides subsequently followed by NO RTA treatment (N/sub 2/O+RPN+NO process) are reported for the first time as a means to extend the reliability scaling limit of SiO/sub 2/- / oxynitride-based gate dielectrics. These films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics of similar thickness (/spl sim/1.4 nm) fabricated by different processes.