Multilevel Cell Ferroelectric HfZrO FinFET With High Speed and Large Memory Window Using AlON Interfacial Layer

In this study, scaled ferroelectric fin field-effect transistors (Fe-FinFETs) based on HfZrO2 were fabricated and characterized for multi-level cell (MLC) operations. With the scaled dimensions of 40 nm for the fin width and gate length of 200–320 nm, the fabricated Fe-FinFET exhibited a large memory window measuring 2.8 V, which is more fault-tolerant for MLC operations. Further, the Fe-FinFET depicted a high switching speed of 100 ns and clearly separated intermediate states, which are suitable for MLC operations. Robust endurance of up to 105 fatigue cycles for each state and a data retention time of up to 104 s without degradation were recorded. The Fe-FinFET demonstrates a high potential for high-density nonvolatile memory applications.