A Novel Heterotype SiC Superjunction MOSFET With Improved Both Forward and Reverse Performance

The SiC superjunction MOSFETs have been the industry's expectation and are getting more and more attention. In this paper, a novel p-type NiO/N-SiC heterotype superjunction (HSJ) MOSFET with an integrated Schottky barrier diode for improved both forward and reverse performance is proposed for the first time. The TCAD numerical simulation results show that the breakdown voltage (BV) of the proposed HSJ MOSFET is increased by more than 14% with a thinner drift region thickness, and the specific on-resistance (R
on,sp
) is reduced by more than 65% in comparison with those of the double trench conventional SiC MOSFET. In addition, the reverse recovery time (t
rr
) and the reverse recovery charge (Q
rr
) of the proposed HSJ-MOSFET are both reduced by 73% and 97%, respectively. Also, a possible fabrication process flow is presented.