650V Planar Anode Gate Super-junction IGBT with Superior Von-Eoff Trade-off

The super-junction IGBT (SJ-IGBT), due to its inherent structural advantages, has the potential for low loss and high frequency applications. To further take the advantage of it, a 650V floating P-pillar SJ-IGBT integrated with a planar anode gate is proposed in this paper, thus a low turn-off loss SJ-IGBT with better V
on
-E
off
trade-off is obtained. Owing to the introduction of anode gate, electrons in the pillar region can be extracted in advance, thereby the turn-off time and loss both are substantially reduced. Compared with trench backside gates, the planar gate has similar effects and better convenience in process implementation. The TCAD simulation results show that the turn-off delay time and the voltage raise time reduce by 61% and 86%, respectively, and the turn-off loss reduces by 44%.