A Double Trench SiC Power MOSFET with Integrated Freewheeling Heterojunction Diode for Improved Third Quadrant Performance

A novel double trench 4H-SiC metal-oxide-semiconductor field-effect transistor with integrated heterojunction (HJD-DTMOS) is proposed and numerically investigated in this paper. The integrated heterojunction diode (HJD) effectively suppress the turn-on of the intrinsic body PN diode in the reverse on-state of proposed HJD-DTMOS. Device simulation results show that the breakdown voltage (BV) of the proposed device is improved by about 3.4% compared with the those of the conventional SiC double trench MOSFET with almost no specific on-resistance degradation. And the reverse recovery time (t
rr
) and the reverse recovery charge (Q
rr
) both are reduced by 76% and 90%. Also, a feasible fabrication process method is provided for the proposed device.