A Novel Use of the Shielded Gate in SGT MOSFETs as the Voltage Sensing Terminal

This paper describes a novel use of the shielded gate in SGT MOSFETs as the voltage sensing terminal. The voltage sensing terminal is physically disconnected from the shielded gate of SGT, and the sensor voltage (V
S
) can replicate a scaled-down version of the SGT voltage (V
DS
). The device circuit hybrid simulation is carried out, and different load capacitors (C
L
) are used. The results show that the sensor behavior is consistent with the change of V
DS
. Besides, with the increase of C
L
(from 0.025 pF to 25 pF), the level of the sensor voltage decreases (V
Smax
from 10 V to 1.7 V), which shows that the range of V
S
is designable under different C
L
.