A 7T1R Nonvolatile SRAM with High Stability, Low Delay and Low Power Consumption Embedded with Transmission Gates (TGs)

In this paper, we propose a novel 7T1R nonvolatile SRAM(NVSRAM)1) to improve the write ability in SRAM read/write mode by introducing write assist feature 2) to add PMOS transistors on each side of NVSRAM cell to form transmission gates (TGs) to improve the stability of NVSRAM cell and improve the read/write mode in SRAM write speed and reduce store and recovery power consumption. The 7T1R NVSRAM cell adds PMOS transistors on each side of the NVSRAM cell to form transmission gates to increase switching speed and reduce power consumption, because the transmission gates allow passing strong "0" through the NMOS and strong "1" trough the PMOS; In addition, the transmission gate has very low on-resistance and very high cut-off resistance, so replacing the NMOS transistors on either side of the NVSRAM cell with a transmission gate (TG) works well.