Numerical analysis investigation the reliability requirement and challenge of XPT™ Trench IGBTs for solar energy applications

Actually, the reliability is one of the key factors for the development of the IGBTs technologies, a resolution in Trench-IGBTs world is promoted for more significant development in the future and has been one of the most powerful drivers that forced engineers to design new products, and to match the market highest efficiency demands. The main goals of this paper based on Trench IGBTs devices (Gen3,Gen4) from IXYS technologies companies available in market during the two last year’s intended for solar energy systems by studying and evaluating their characteristics under real operating conditions UIS stress conditions. This mode of operation is therefore extremely restrictive because of the very high level of energy that the component under test must then dissipate. In this study, we highlight the effect of influential parameters on their safety zone, namely avalanche voltages (overvoltage), switching losses and switching speed. This characterization as we consider the key performances will thus provide us with objective resources aimed at optimizing the performance of these new generations of trench-IGBTs.