A Millimeter-Wave Concurrent LNA in 22-nm CMOS FDSOI for 5G Applications

This article presents a concurrent dual-band low-noise amplifier (LNA) in a 22-nm fully-depleted silicon-on-insulator (FDSOI) CMOS process. This three-stage cascode LNA is designed to operate concurrently between 23.3 and 30.3 GHz and 38 and 44.7 GHz (
$K$
-/
$Ka$
-band) for 5G mm-wave bands. To achieve a high rejection in the stopband between the two passbands, a notch circuit is designed using a cross-coupled pair (XCP) to mitigate the limited inductor/capacitor quality factors, thus enhancing notch depth in the second stage. The gain of the LNA can be digitally controlled in the third stage by over eight steps of 1 dB. The input matching network also acts like a high-pass filter to generate a sufficient rejection for frequencies below 13 GHz. The measured gain is 22 dB at 24 GHz and 16 dB at 40.5 GHz, with a 3-dB bandwidth of 23.3–30.3 GHz for low passband and 38–44.7 GHz for high passband. The LNA achieves a noise figure (NF) of 2.55/4.75 dB at 28/40 GHz, a rejection of 19.2 dB at 34.1 GHz, and a power consumption of 18 mW with supply voltages of 0.8 V for the first stage, and 1.0 V for the rest. The chip has a length of
$1035 ~\mu \text{m}$
, a width of
$885 ~\mu \text{m}$
, and an area of
$0.916 mm^{2}$
including all pads and decoupling capacitors.