Wide Load LDO with Source Follower-Based DC Level Shifter

A low-dropout (LDO) regulator for wide load current I
L
is proposed in this paper. The proposed source follower-based DC level shifter relieves the loop gain degradation across a wide range of IL. The proposed technique also enhances stability. The proposed LDO is implemented in the 180-nm CMOS process. The improvement of PSRR is 32 dB at 1 kHz and 300 mA I
L
. The proposed method enhances the line and load regulations. LDO output V
OUT
variation is reduced by 47 mV at 300 mA I
L
. The phase margin increases by 50 degree and 31 degree at 30 mA I
L
and 300 mA I
L
, respectively.