CMOS Reference Voltage Source Using Drain Current Temperature Characteristics

This paper proposes a CMOS reference voltage source that is insensitive to changes in power supply and temperature, targeted for consumer electronics applications where low cost is mandatory. The proposed reference voltage source consists of diode-connected MOSFETs in series and the bias current generator with the Nagata current source insensitive to temperature as well as supply voltage. This circuit utilizes the drain current temperature characteristics for the temperature insensitivity realization. The basic circuit design idea, circuit topology and SPICE simulation results with TSMC
$0.18\mu \mathrm{m}$
CMOS parameters are shown. Also, its application to the reference voltage distribution on the entire chip is discussed.