Pulsed Electron Beam induced SEU Effects in a SRAM memory

Single Event Effects (SEEs) correlated to pulsed beam effects induced by high energy electrons in a very well-established device, such as the ESA SEU (Singe Event Upset) monitor, are investigated in this paper. Measurements with different electron intensities have been performed at VESPER (The Very energetic Electron facility for Space Planetary Exploration missions in harsh Radiative environments) at the CERN Linear Electron Accelerator for Research (CLEAR) focused on very high dose rates per pulse. The possible contribution of electron nuclear events and flash effects is discussed.