Irradiation Temperature Influence on the Degradation of the Electrical Performances of Midwave Infrared Type-II Superlattice Detectors

In this work, we present the influence of the irradiation temperature on electrical characterization of midwave infrared (MWIR) InAs/GaSb type-II superlattice (T2SL) photodetector, showing cutoff wavelength equal to 5
$\mu \text{m}$
at 90 K. The proton irradiations were performed with 60-MeV protons and fluences up to
$8\times 10^{11}\,\,\text{H}^{+}$
/cm2 at cryogenic (100 K) or room temperature (300 K). The gamma irradiation, from a Cobalt-60 source, allows to reach a dose up to 50 krad(Si). We observed that degradation of the dark current under proton or gamma irradiations is strongly dependent on the temperature of the detector during irradiation but also on the protection layer used during the detector’s technological process.