Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs

The bias temperature instability (BTI) has been an issue for SiC MOSFET. The device performance would vary with the induced threshold drift. In this paper, the peak shoot-through current during crosstalk under the impact BTI is investigated in regard to increase of stressing time and recovery time for SiC symmetrical and asymmetrical double-trench MOSFET as well as planar MOSFET for comparison purpose. The change of threshold voltage under BTI is measured and are compared with the shoot-through. The measurement of threshold drift under accelerated gate stressing is also conducted and the impact of temperature is investigated.