Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress

A comprehensive range of surge current measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results show that the SiC devices outperform the Silicon devices in terms of the avalanche ruggedness, while the SiC MPS diode can compete with the Silicon PiN diode in terms of the surge current performance. These results are validated by the experimental measurements and their subsequent calculated avalanche energy.