Influence of Layout Parasitics and its Optimization in Two-Level Gallium-Nitride Based Current Source Inverter

Utilization of GaN devices for cryogenic power electronics converters ensures higher efficiency and density. This paper presents an application of GaN device for the development of a low temperature current source inverter (CSI). A detailed investigation about influence of layout parasitics onto switching speed, and device over voltages/currents of a CSI is carried out. The paper also optimizes the commutation power loop by having a “Y” shaped layout for CSI with inductance of 5.25 nH. The design concept is validated with experiments by developing a three phase CSI with GaN high electron mobility transistors (HEMTs), where design of power loop inductance has also been verified.