Junction Temperature Measurement for Paralleled Silicon-Carbide MOSFETs in Conduction Mode

This paper proposes a solution for junction temperature sensing of parallel SiC-MOSFETs in all operation modes. This implementation utilizes the temperature dependency of the MOSFETs internal Gate resistance to sense the junction temerature. This method allows to obtain individual temperatures from the paralleled MOSFETs. To measure the Gate resistance, the phase shift between Gate voltage and current is sensed to obtain the temperature. Phase shift measurement allows an easy implementation using integrated circuits. Additionally, this method is robust against common mode interference. This paper shows that the temperature of four parallel MOSFETs in on-state is sensed with a sensitivity of 2.8 mV/K.