Static and Dynamic Characterization of 3.3-kV SiC MOSFET Modules With and Without External Anti- Parallel SiC JBS Diode

The innovation pace of modern and future power electronic systems such as energy storage systems and D-FACTs is driving the utilization of H.V. SiC MOSFETs. This paper presents the static and dynamic characterization of two configurations of a 3.3-kV SiC MOSFET half-bridge power module. The freewheeling diode in the first configuration is the body diode of the MOSFET. In contrast, the second configuration consists of both the body diode and an external anti-parallel SiC junction barrier Schottky (JBS) diode per switching position. The static and dynamic characteristics of these two configurations are investigated and compared at different junction temperatures. Unlike other evaluations, the comparison shows that the second configuration increased switching losses, switching times, and drain current overshoots. However, it decreased drain-to-source voltage overshoot and slew rates compared with the first configuration.