Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits

The device performance of monolithically integrated power Schottky barrier diodes (SBDs) and depletion-mode (D-mode) MIS HEMTs is studied in relation to the thickness of the gate dielectric, the gate-edge termination (GET) layer and AlGaN barrier. Special attention is paid to the turn-on voltage (V
TON
), ON-resistance (R
ON
), device dispersion, leakage current and breakdown voltage (V
BD
) of SBDs and D-mode MIS-HEMTs. Based on the current design, SBDs show the lowest dynamic R
ON
for devices with 7.5–9.5 nm AlGaN barrier thickness and 25–35 nm GET thicknesses. The best performance of the D-mode MIS-HEMTs is observed for devices with 5.5 nm AlGaN barrier thickness and 45 nm gate dielectric thickness.