A failure analysis framework of ReRAM In-Memory Logic operations

Computation-in-Memory (CiM) with emerging non-volatile memories leads to significant performance and energy efficiency, which is a promising approach to address so-called memory wall of conventional von Neumann architectures. Redox-based Random access memory (ReRAM) is an appropriate candidate for the realization of CiM concepts in CMOS co-integrated crossbar structures. However, ReRAM devices suffer from inherent variability in fabrication and operation. In this paper, we propose a statistical failure probability framework for the reliability evaluation of ReRAM-based CiM. Based on this, a comprehensive reliability analysis is performed for logic operations in ReRAM-based Scouting and MAGIC concepts at the crossbar level. Our proposed framework shows that existing logic operation in the crossbar architecture has a high failure probability due to the variability and crossbar non-idealities. Hence, a modified crossbar design is proposed to achieve the target reliability requirements.