21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode

Sensitivity (
${S}$
) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the
${S}$
values of the
${\mathrm {Ni}}_{(\text {50 nm})}$
-
${\mathrm {Au}}_{(\text {100 nm})}$
/Ga2O3/
${p}$
-Si vertical MOS type diode, using the measured capacitance–voltage (
${C}_{\text {m}}$
–
${V}$
) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the
${S}$
value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.