High Power 14xx-nm Raman Pump Using GaInAsP/InP Electric-Field-Control Layers

14xx-nm Raman-pump of 1-Watt was demonstrated in a 14pin-butterfly package by using an 5mm-laser cavity with a low optical confinement having an electric-field-controle-layer consisted of GaInAsP/InP multilayer structure. The power consumption of 11.3W at 800mW of fiber output power was obtained at
$35^{\mathrm{o}}\mathrm{C}$
LD-chip temperature.