$1.3-\mu \mathrm{m}$ InAs Quantum Dot Lasers with P-type modulation and direct N-type co-doping

O-band quantum dot lasers with co-doping reduce threshold current density relative to the undoped case, for 1mm long uncoated lasers from 245Acm
⁻²
to 132Acm
⁻²
at 27°C and 731Acm
⁻²
to 312Acm
⁻²
at 97°C. Improvements are also significant compared to lasers employing any one doping strategy.