High-brightness broad-area diode lasers with a novel enhanced self-aligned lateral structure

We present broad-area lasers with enhanced self-aligned lateral structure (eSAS) using current-blocking layers optimized for tunnel current suppression, integrated within the p-AlGaAs cladding using in-situ etching and epitaxial regrowth. Lateral leakage is tenfold reduced, for 30% lower threshold, higher peak efficiency, and improved beam parameters.