2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

In this letter, we demonstrate high-performance lateral AlGaN/GaN hybrid anode diodes (HADs) with p-GaN stripe array gate (PSAG) structure with much reduced turn-on voltage (
${V}_{\text {T}}$
) compared with reference p-GaN gate HADs. Without field plates (FPs) or passivation, the PSAG-HAD with an anode-cathode distance (
${L}_{\text {AC}}$
) of 20
$\mu \text{m}$
and p-GaN extension length (
${L}_{\text {E}}$
) of 3
$\mu \text{m}$
showed a low
${V}_{\text {T}}$
of 0.8 V, a low reverse leakage current of 1.87 nA/mm at −1 kV, a high
${I}_{\text {ON}}/{I}_{\text {OFF}}$
ratio of
$\sim 10^{{11}}$
, a high breakdown voltage (BV) of 2.69 kV and a low specific ON-resistance (
${R}_{\text {ON,sp}}$
) of 2.11
$\text{m}\Omega \cdot $
cm2. This results in a Baliga’s figure-of-merit of 3.43 GW/cm2, which is the highest among reported lateral GaN HADs to date. This work shows that the PSAG-HADs are promising for next-generation high-voltage high-efficiency power electronics.