An Intensive Study of Tree-Shaped JL-NSFET: Digital and Analog/RF Perspective

This manuscript for the first time presents the digital and analog/RF performance analysis for novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) channel is added to the vertically stacked JL-NSFET to form a Tree-shaped structure. The Tree-shaped JL-NSFET is compared with the conventional JL-NSFET for
${L}_{g}$
= 16 nm,
${T}_{\text {NS}}$
= 5 nm,
${W}_{\text {NS}}$
= 18 nm,
${W}_{\text {IB}}$
= 2 nm, and
${H}_{\text {IB}}$
= 6 nm. It is observed that ON-current (
${I}_{ \mathrm{\scriptscriptstyle ON}}$
) has been improved for Tree-shaped JL-NSFET by an amount of ~15.3% with a decent subthreshold swing of 61.5 mV/dec. The analog/RF performance of the Tree-shaped JL-NSFET has been improved satisfactorily as compared to the conventional JL-NSFET. Further to enhance the digital/analog RF performance the
${W}_{\text {IB}}$
is varied between 2–4 nm. The
${I}_{ \mathrm{\scriptscriptstyle ON}}$
is increased by an amount of ~23.56% with the increase in
${W}_{\text {IB}}$
due to the increase in effective width. However, the same resulted in the degradation of
${A}_{V}$
, GFP,
${f}_{T}$
, and
${f}_{\text {MAX}}$
by an amount of ~1.72%, ~3.39%, ~4.46%, and ~8.39%, respectively, at 1-nA normalized drain current. Hence lower
${W}_{\text {IB}}$
must be chosen for the improvement of analog/RF parameters. Furthermore, the effect of temperature (100–400 K) on Tree-shaped JL-NSFET is also investigated and the performance is best recorded at lower temperatures. At 1-nA normalized drain current,
${g}_{m}$
,
${A}_{V}$
,
${f}_{T}$
,
${f}_{\text {MAX}}$
, and GFP are noticeably improved by an amount of ~68.6%, ~5.84%, ~65.02%, ~34.14%, and ~56.02%, respectively. Moreover, the effect of IB height (
${H}_{\text {IB}}$
) is explored (6–14 nm) and it is inferred that
${H}_{\text {IB}}$
should be optimized to get better digital and analog/RF performances according to the application areas.