Optimization of Nitrogen Ion Implantation Condition for β-Ga2O3 Vertical MOSFETs via Process and Device Simulation

In this work, nitrogen implantation conditions for a vertical
$\beta $
-Ga2O3 MOSFET with a planar gate have been optimized to maximize the power figure of merit (PFOM) by performing extensive 2-D process and device technology computer-aided design (TCAD) simulations. The nitrogen implantation process conditions are optimized as the implantation energy of 300 keV and the maximum concentration of
${1.1} \times {10}^{{19}}$
cm
$^{-{3}}$
. With the optimized conditions, the device realizes the enhancement-mode (E-mode) operation with the threshold voltage of 3.84 V. The PFOM is optimized as 88.7 MW/cm2 with the ON-resistance of 43.8
$\text{m}\Omega $
/cm2 and the breakdown voltage of 1963 V.