Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy

We investigated quantitatively the carrier distribution in a phosphorous (P) diffused black Silicon (Si) solar cell using scanning nonlinear dielectric microscopy (SNDM). As a reference, we measured the carrier distribution on a flat Si sample fabricated under the same P diffusion conditions. The precise carrier distributions in the emitter were visualized, which revealed the feature of carrier distribution in the emitter of black Si solar cell. Super-higher-order-SNDM was also employed to perform a quantitative analysis of the depletion layer distribution. It was found that the carrier density profile and the depletion layer thickness is less regular in the black Si than in the flat emitter, suggesting that this fluctuation may affect the power conversion efficiency of black Si solar cell.