On the Effect of Indium Chloride Dose on the Recrystallization of Cu(In,Ga)Se2 Thin Films and associated Devices

$\mathbf{Cu}(\mathbf{In,} \mathbf{Ga})\mathbf{Se}_{\boldsymbol{2}}$
thin films deposited by a single-stage co-evaporation process at 350 °C on molybdenum coated soda lime glass substrate were annealed post-deposition in
$\mathbf{InCl}_{\boldsymbol{3}}$
vapor. The amount of
$\mathbf{InCl}_{\boldsymbol{3}}$
and Se was varied. The annealing treatment was done at 450 °C for 30 minutes. Increase in grain size was observed after the treatment in all cases by X-ray diffraction. Device performance was low, but improved slightly after KCN etching.