Excess current due to embedded superlattices in Graphene/Ox/n-GaAs solar cells, at 50 Suns and above

We demonstrate the advantage of current density increase in graphene/n-GaAs Schottky barrier solar cells with concentrated-light trapping in a twenty-period AlAs-GaAs superlattice (SL) embedded in the bulk of an n-GaAs layer. Such a layer traps photo-excited carrier leading to maximum absorption through optical-gap increase from 1.42 to 2.129 eV, We focus on carrier escape from quantum wells, due to thermionic emission and conclude that excess carriers, thermally escaping from quantum wells of the superlattice region, contribute additional current depending on temperature and solar concentration. Retaining ideal photodiode conditions and ignoring contributions from the bulk and the depletion regions, we show the feasibility of high current generation under solar concentration, due to electrons from the superlattice region of the graphene-GaAs/ Alloy Schottky cell.